形状记忆合金驱动的连续跳跃柔性机器人

针对在复杂、狭窄的非结构化地形下跳跃机器人存在的着陆稳定性和运动连续性的问题,提出了一种形状记忆合金(shape memory alloy,简称SMA)智能材料驱动的柔性跳跃机器人,它具有轻质小型、结构简单及连续运动的优点。利用对称的折纸柔性身体减少着陆振动,保证着陆稳定;利用对称的双SMA弹簧拮抗系统实现弹性元件交替变形和储能释能的功能;建立了柔性机器人跳跃运动的理论模型,研究了关键结构尺寸对能量储存和跳跃性能的影响机制,并研制了一款尺寸为6 cm×4 cm×2.5 cm、质量为3.8 g的原理样机。实验结果表明:柔性机器人依靠SMA驱动能够实现跳跃触发和形态恢复,最大跳跃高度和远度分别为8.67 cm和18 cm,并且可以适应不同工作面。该机器人跳跃性能优越,控制顺序简单,可为非结构化地形下完成侦察探测工作奠定基础。     

增材制造设计(DfAM)下的金刚石晶格结构研究

基于机械零件的增材制造设计,用仿自然式方法设计了一种金刚石晶格结构,对晶胞相对密度和等效弹性模量建立了数学模型,并拟合得到二者关系式,一系列的仿真验证结果显示理论研究所得关系式具有一定的正确性;对金刚石晶格填充结构提出变密度假设,并用仿真和压缩试验的方法进行了验证,结果显示,填充单元密度以受力点为中心渐渐减小的变密度结构拥有更好的抗压性能,同时验证了本文得出的等效弹性模量数学模型具有一定的正确性和适用性.本研究结果可应用于承压机械零件的实体夹层填充,对机械零件进行应力匹配变密度设计,以达到机械结构轻量化的目标.     

Effect of phosphogypsum on saline-alkalinity and aggregate stability of bauxite residue

A column experiment was conducted to investigate the effect of phosphogypsum (PG) on the saline- alkalinity, and aggregate stability of bauxite residue. Results showed that: with increasing leaching time, the concentrations of saline-alkali ions decreased while the concentration increased in bauxite residue leachate; compared with CK (control group) treatment, pH, electric conductivity (EC), exchangeable sodium percentage (ESP), sodium absorption ratio (SAR), and exchangeable Na⁺ content of bauxite residue were reduced following PG treatment; average particle sizes in aggregates following CK and PG treatments were determined to be 155 and 193 nm, respectively. SR-μCT test results also confirmed that bauxite residue following PG treatment acquired larger aggregates and larger pore diameter. These results indicate that the PG treatment could significantly modulate the saline-alkalinity, and simultaneously enhance aggregate stability of bauxite residue, which provides a facile approach to reclaim bauxite residue disposal areas.     

Chemical durability and surface alteration of lanthanide zirconates (A2Zr2O7: A = La-Yb)

Chemical durability of lanthanide zirconates (A₂Zr₂O₇) (A = La-Yb) under near-field environments is important for evaluating their application as potential nuclear waste forms. In this work, A₂Zr₂O₇ (A = La-Yb) are synthesized by spark plasma sintering with controlled microstructure and their chemical durability are evaluated in a nitric acid solution (pH = 1). Scanning transmission electron microscopy analysis reveals an amorphous passivation film either enriched with Zr or lanthanide. The complex chemistry of the passivation films can be correlated with a transition in corrosion mechanisms from a preferential release of lanthanide in La₂Zr₂O₇ to a preferential release of Zr in Er₂Zr₂O₇ and Yb₂Zr₂O₇. These results suggest a dominant mechanism of incongruent dissolution and surface reorganization for the formation of passivation films. Strong correlations are identified between the leaching rates and cation ionic size, ionic potential, electronegativity differences between A-site cation and Zr, and bonding valence sum of oxygen, suggesting important impacts of structural and bonding characteristics in controlling chemical durability of lanthanide zirconates.     

Matrix Manipulation of Directly-Synthesized PbS Quantum Dot Inks Enabled by Coordination Engineering

The direct-synthesis of conductive PbS quantum dot (QD) ink is facile, scalable, and low-cost, boosting the future commercialization of optoelectronics based on colloidal QDs. However, manipulating the QD matrix structures still is a challenge, which limits the corresponding QD solar cell performance. Here, for the first time a coordination-engineering strategy to finely adjust the matrix thickness around the QDs is presented, in which halogen salts are introduced into the reaction to convert the excessive insulating lead iodide into soluble iodoplumbate species. As a result, the obtained QD film exhibits shrunk insulating shells, leading to higher charge carrier transport and superior surface passivation compared to the control devices. A significantly improved power-conversion efficiency from 10.52% to 12.12% can be achieved after the matrix engineering. Therefore, the work shows high significance in promoting the practical application of directly synthesized PbS QD inks in large-area low-cost optoelectronic devices.     

基于度量学习的意图识别和槽填充方法

人机对话中小样本学习场景下的意图识别和槽填充,是自然语言处理的一个重要课题.本文采用基于度量学习的方法,通过计算query set中的样本与support set中样本的距离,寻找距离最近的类别样本作为分类标签,同时将两个任务联合进行训练,用以提升模型的效果.从实验结果中可以得出,本文提出的Fine-tune方法,对意图识别和槽填充任务都有一定的帮助和提升.胶囊网络在意图识别中也起到了一定的效果,可以帮助去除一部分无关信息,但对槽填充任务的帮助不明显;而任务自适应的投影网络,可以更好地将不同类的向量分开,提升了两个任务的性能.     

基于卓越工程师教育的频率特性分析课堂教学研究

频率特性分析在工程应用中具有重要的作用,在电路分析、模拟电子技术、信号与系统、自动控制理论等相关课程中都涉及到相关章节内容,在不同课程中如何根据工程应用和学生学习阶段把握具体的讲解内容和讲解方式非常重要。本文从频率特性的求解方法和具体物理意义角度开展在不同课程中讲解的方法,从时域和频域角度分别讨论其物理意义和具体的分析方法。通过渐进深化的教学过程和教学方法不断提高学生的知识掌握和应用技能,提高学生的工程意识、工程素质和工程创新能力,强化学生对于频率特性课程知识的综合应用能力。     

土壤中有机污染物的检测技术研究进展

土壤污染防治法的实施促进了国内土壤监测业务的发展.对比分析了目前土壤中有机污染物的采样、前处理技术.挥发性有机污染物(VOCs)对采样环节的要求较高,需使用采样器和保存剂来减少挥发损失,进样前提取过程宜选用吹扫捕集等具有封闭系统的高效自动化方式.半挥发性有机污染物(SVOCs)的回收率主要受萃取、净化方式的影响,二氯甲烷和加速溶剂萃取的组合方式既快速又节约溶剂;净化材料宜选择弗罗里硅土、氧化铝类物质.选择合适的采样、前处理方法才能保证回收率、质量控制的要求.     

A novel approach for bulk micromachining of 4H-SiC by tool-based electrolytic plasma etching in HF-free aqueous solution

Bulk micromachining of single-crystal SiC has been challenging due to its extreme stability both mechanically and chemically. To address this issue, a novel tool-based electrolytic plasma etching method is proposed, with which micropatterns and micro-holes are fabricated in SiC in a hydrofluoric acid-free aqueous solution with no need for masks. The material removal is the result of the combined effects of electrolytic plasma chemistry and physics. The chemistry refers to the reaction of Si with hydroxyl radical to form various SiO_x and with H to form silanes, and the reactions of C to form volatile carbon oxides or hydrocarbons, all of which are accomplished and enhanced under the electrolytic plasma atmosphere. Besides, the local high temperature of plasma thermally promotes the evaporation or dissolution of SiO₂ in NaOH solution. The tool-based electrolytic plasma etching method provides alternative approaches for the fabrication of SiC-based MEMS and devices.